发明名称 INTERCONNECTION STRUCTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MAKING THE SAME
摘要 An interconnection structure includes a lower layer metal wire in a first inter-metal dielectric layer on a substrate; a second inter-metal dielectric layer on the first inter-metal dielectric layer and covering the lower layer metal wire; an upper layer metal wire on the second inter-metal dielectric layer; and a via interconnection structure in the second inter-metal dielectric layer for interconnecting the upper layer metal wire with the lower layer metal wire, wherein the via interconnection structure comprises a tungsten stud on the lower layer metal wire, and an aluminum plug stacked on the tungsten stud.
申请公布号 US2010314765(A1) 申请公布日期 2010.12.16
申请号 US20090485909 申请日期 2009.06.16
申请人 LIANG WEN-PING;CHIU YU-SHAN;SU KUO-HUI 发明人 LIANG WEN-PING;CHIU YU-SHAN;SU KUO-HUI
分类号 H01L23/522;H01L21/768;H01L23/532 主分类号 H01L23/522
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