发明名称 |
INTERCONNECTION STRUCTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MAKING THE SAME |
摘要 |
An interconnection structure includes a lower layer metal wire in a first inter-metal dielectric layer on a substrate; a second inter-metal dielectric layer on the first inter-metal dielectric layer and covering the lower layer metal wire; an upper layer metal wire on the second inter-metal dielectric layer; and a via interconnection structure in the second inter-metal dielectric layer for interconnecting the upper layer metal wire with the lower layer metal wire, wherein the via interconnection structure comprises a tungsten stud on the lower layer metal wire, and an aluminum plug stacked on the tungsten stud.
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申请公布号 |
US2010314765(A1) |
申请公布日期 |
2010.12.16 |
申请号 |
US20090485909 |
申请日期 |
2009.06.16 |
申请人 |
LIANG WEN-PING;CHIU YU-SHAN;SU KUO-HUI |
发明人 |
LIANG WEN-PING;CHIU YU-SHAN;SU KUO-HUI |
分类号 |
H01L23/522;H01L21/768;H01L23/532 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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