MULTIFUNCTION NONVOLATILE FUSION MEMORY DEVICE AND FABRICATION METHOD THEREOF

摘要

A multifunction nonvolatile fusion memory device according to one embodiment of the present invention comprises: a semiconductor substrate; a first resistance change region which is formed on the semiconductor substrate; an electric charge capture region which is formed on the first resistance change region; a second resistance change region which is formed on the electric charge capture region; a gate which is formed on the second resistance change region; and a source and a drain which are separated from each other within the semiconductor substrate.