METHOD FOR FORMING GE-SB-TE FILM, AND STORAGE MEDIUM

摘要

Disclosed is a film-forming method which has: a preprocessing step (step (1)) wherein the inside of a processing container is exposed to a gas containing Cl and/or F in a state having no substrate in the processing container; a step (step (2)) wherein a substrate is carried into the processing container after the step 1; and a step (step (3)) wherein a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material are introduced into the processing container having the substrate carried therein, and a Ge-Sb-Te film to be a Ge2Sb2Te5 film is formed on the substrate by CVD.