| 摘要 |
PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to prevent a void in forming an interlayer insulating film by lowering the height of select lines and reducing an aspect ratio between the select lines. CONSTITUTION: A gate insulating layer(102) and a first conductive film(104) are formed on a semiconductor substrate(100). A buffer layer and a recess mask pattern are formed on top of the first conductive film. The height of the first conductive film which is exposed to a first area by using the recess mask pattern. The dielectric film(110) and the second conductive film(112) are formed on the first conductive film. A gate patterning process is performed to form the select lines in the second region. |
