| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that uses a magnetic tunnel junction device MTJ. <P>SOLUTION: The semiconductor memory device includes: a memory cell connected between a first drive line and a second drive line, for storing data having polarity corresponding to each direction of current flowing in the first drive line and the second drive line; and a current control means for controlling each supply current supplied to the first drive line and the second drive line, according to temperature information at the time of write operation. <P>COPYRIGHT: (C)2011,JPO&INPIT |
