| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a novel photoelectric conversion device and a method of manufacturing the same. <P>SOLUTION: On a base substrate having a light-transmitting property, a light-transmitting insulating layer and a single crystal semiconductor layer fixed via the insulating layer are formed. A plurality of first impurity semiconductor layers each having one conductivity type are provided in a band shape in the surface layer of the single crystal semiconductor layer or on the surface of the single crystal semiconductor layer, and a plurality of second impurity semiconductor layers each having a conductivity type which is opposite to the one conductivity type are provided in a band shape in such a manner that the first impurity semiconductor layers and the second impurity semiconductor layers are alternately provided and do not overlap with each other. First electrodes in contact with the first impurity semiconductor layers and second electrodes in contact with the second impurity semiconductor layers are provided to form a back contact cell, and a photoelectric conversion device having a photo acceptance surface on the base substrate side is formed. In a photoelectric conversion module, a plurality of photoelectric conversion devices are formed on a transparent insulating substrate, and a first connection electrode for connection between the first electrode of one of adjacent photoelectric conversion devices and the second electrode of the other thereof and/or a second connection electrodes for connection between the first electrodes or between the second electrodes are formed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
