发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device including a resistor which achieves the reduction of a chip size and variations in resistance value, and a manufacturing method thereof. SOLUTION: The semiconductor device 21 constituting an analogue circuit includes a silicon substrate 1, a resistor 3 which is linearly formed on the silicon substrate 1 and made mainly of silicon, a plurality of contact forming areas 7 each of which is formed in contact with any one of both ends of the resistor 3 and made of metal silicide, an interlayer insulating film 4 formed on the resistor 3 and the plurality of contact forming areas 7, and a plurality of contact plugs 5 each of which penetrates the interlayer insulating film 4 and electrically connects each of the contact forming areas 7 to a metal wire 6 formed on the interlayer insulating film 4. An in-plane pattern of each of the plurality of contact forming areas 7 is bent at least twice in a planar direction from the resistor 3, so that a part of the contact forming area 7 is formed in parallel with the resistor 3. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010283310(A) 申请公布日期 2010.12.16
申请号 JP20090137760 申请日期 2009.06.08
申请人 PANASONIC CORP 发明人 NANJO TAKESHI
分类号 H01L27/04;H01L21/822 主分类号 H01L27/04
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