发明名称 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE, PIXEL ARRAY SUBSTRATE INCLUDING THE SEMICONDUCTOR DEVICE, SENSING ELEMENT ARRAY SUBSTRATE INCLUDING THE SEMICONDUCTOR DEVICE, DISPLAY PANEL, INPUT PANEL, DISPLAY DEVICE, PORTABLE DEVICE, X-RAY INSPECTION APPARATUS, AND ROENTGEN DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device for suppressing the deterioration of on-characteristics caused by bending stress, and to provide a method of manufacturing the semiconductor device, a pixel array substrate including the semiconductor device, a sensing element array substrate including the semiconductor device, a display panel, an input panel, a display device, a portable device, an X-ray inspection device, and a roentgen device. SOLUTION: The semiconductor device includes a semiconductor layer 4 having a channel region 14 as a crystallized region formed of a single crystalline film or polycrystalline film, and a source region 24 and a drain region 34 as amorphous regions formed of amorphous films. The channel region 14 is formed by forming an amorphous film as the semiconductor layer 4 and making a current flow in the amorphous film to crystalize a part of the film. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010283233(A) 申请公布日期 2010.12.16
申请号 JP20090136550 申请日期 2009.06.05
申请人 SHARP CORP 发明人 SHIOMI TAKESHI
分类号 H01L29/786;H01L21/20;H01L21/336 主分类号 H01L29/786
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