发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE, PIXEL ARRAY SUBSTRATE INCLUDING THE SEMICONDUCTOR DEVICE, SENSING ELEMENT ARRAY SUBSTRATE INCLUDING THE SEMICONDUCTOR DEVICE, DISPLAY PANEL, INPUT PANEL, DISPLAY DEVICE, PORTABLE DEVICE, X-RAY INSPECTION APPARATUS, AND ROENTGEN DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for suppressing the deterioration of on-characteristics caused by bending stress, and to provide a method of manufacturing the semiconductor device, a pixel array substrate including the semiconductor device, a sensing element array substrate including the semiconductor device, a display panel, an input panel, a display device, a portable device, an X-ray inspection device, and a roentgen device. SOLUTION: The semiconductor device includes a semiconductor layer 4 having a channel region 14 as a crystallized region formed of a single crystalline film or polycrystalline film, and a source region 24 and a drain region 34 as amorphous regions formed of amorphous films. The channel region 14 is formed by forming an amorphous film as the semiconductor layer 4 and making a current flow in the amorphous film to crystalize a part of the film. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2010283233(A) |
申请公布日期 |
2010.12.16 |
申请号 |
JP20090136550 |
申请日期 |
2009.06.05 |
申请人 |
SHARP CORP |
发明人 |
SHIOMI TAKESHI |
分类号 |
H01L29/786;H01L21/20;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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