发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce a leak current of a system LSI having a memory mounted thereon, and reduce power consumption in a standby state. SOLUTION: The semiconductor device has a power switch in a logic circuit of the system LSI, and reduces a leak current by shutting off the switch in the standby state. At the same time, an SRAM circuit reduces the leak current by controlling a substrate bias, setting the power switch for a read amplifier or write amplifier, and shutting off the switch. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010282721(A) 申请公布日期 2010.12.16
申请号 JP20100178272 申请日期 2010.08.09
申请人 RENESAS ELECTRONICS CORP 发明人 YAMAOKA MASANAO;ISHIBASHI KOICHIRO;MATSUI SHIGEZUMI;OSADA KENICHI
分类号 G11C11/41;G11C11/417 主分类号 G11C11/41
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