Method of Selectively Etching Semiconductor region,申请号KR20080097552-传众专利搜索

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发明名称	Method of Selectively Etching Semiconductor region
摘要
申请公布号	KR101001773(B1)	申请公布日期	2010.12.15
申请号	KR20080097552	申请日期	2008.10.06
申请人		发明人
分类号	H01L33/12;H01L21/3063	主分类号	H01L33/12
代理机构		代理人
主权项
地址

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