| 摘要 |
PURPOSE: A substrate processing method is provided to prevent the use of unnecessary processing gas by controlling the supplying amount of a hydrogen gas according to the change of an opening part width. CONSTITUTION: An amorphous carbon film(51) is formed on the surface of a silicon based material(50). An SiON film(52) is formed on the amorphous carbon film. An anti-reflective film(53) is formed on the SiON film. A photo-resist film(54) is formed on the anti-reflective film using a spin coater. ArF excimer laser is radiated to the photo-resist film to be alkaline soluble. A strong alkaline development solution is added to the photo-resist film in order to eliminate alkaline soluble photo-resist film part. A photo-resist film including opening parts are obtained.
|
