METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fine pattern in a semiconductor device is provided to reduce manufacturing costs by forming a second photoresist pattern through a simple exposure without an exposure mask. CONSTITUTION: A first photoresist pattern(17) is formed on a semiconductor substrate(11). An inter-layer mirror film(21) is formed by heating a first photoresist pattern under 110-220°C. A second photoresist film(31) is formed on outcome. The exposure and development process are performed on the second photoresist film without an exposure mask. A second photoresist pattern(33) is formed between the first photoresist patterns.