发明名称 METHOD OF MEASURING POINT DEFECT DISTRIBUTION OF SILICON SINGLE CRYSTAL INGOT
摘要 <p>A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions ÄVÜ, ÄPvÜ, ÄPiÜ and ÄIÜ is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be symmetrical against the central axis. A first transition metal is metal-stained on the surface of the first sample and a second transition metal different from the first transition metal is metal-stained on the surface of the second sample. The first and second samples stained with the metals are thermally treated and the first and second transition metals are diffused into the inside of the samples. Recombination lifetimes in the whole of the first and second samples are respectively measured, and the vertical measurement of the first sample is overlapped on the vertical measurement of the second sample. The boundary between the regions ÄPiÜ and ÄIÜ and the boundary between the regions ÄVÜ and ÄPvÜ are respectively specified from the overlapped result. <IMAGE></p>
申请公布号 EP1559812(B1) 申请公布日期 2010.12.15
申请号 EP20030756681 申请日期 2003.10.17
申请人 SUMCO CORPORATION 发明人 KURITA, KAZUNARI
分类号 C30B29/06;C30B15/00;C30B33/00;G01N27/04 主分类号 C30B29/06
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