Method for fabricating an LED having vertical structure

摘要

A method of producing a light emitting device, comprising:
growing a semiconductor structure on a growth substrate (122), the semiconductor structure comprising a first-type GaN-based layer (124), an active layer (126) on the first-type GaN-based layer, and a second-type GaN-based layer (128) on the active layer;
forming a first-type electrode (150) on the semiconductor structure;
forming a conductive support layer (156) on the first-type electrode;
removing the growth substrate;
forming a second-type electrode (160) on the semiconductor structure; and
forming a passivation layer (162) on the semiconductor structure after removing the growth substrate, wherein the conductive support layer is arranged to fully support the semiconductor structure during and after removal of the growth substrate.