发明名称 |
ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>PURPOSE: An array substrate and a method of fabricating the same are provided to improve productivity by reducing the thickness of an oxide semiconductor layer to reduce deposition time. CONSTITUTION: A gate electrode(108) is formed in a switching region(TrA). A gate insulating layer(112) is formed in a gate wiring and the gate electrode. An oxide semiconductor layer(119) with first thickness is formed on the gate insulating layer. An assistant pattern is formed on the oxide semiconductor layer and has second thickness. A source electrode(135) and a drain electrode(138) are formed on the assistant pattern.</p> |
申请公布号 |
KR20100130490(A) |
申请公布日期 |
2010.12.13 |
申请号 |
KR20090049214 |
申请日期 |
2009.06.03 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
KIM, YONG YUB;RYOO, CHANG IL |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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