| 摘要 |
PURPOSE: A semiconductor light emitting element and a method for manufacturing the same are provided to prevent light generated from an active layer from being reflected to the active layer by including a transparent electrode layer at the interface between a p-type semiconductor layer and a conductive substrate. CONSTITUTION: A p-type electrode(135) is formed on a conductive substrate(140). A transparent electrode layer(130) is formed on the p-type electrode. A light emitting structure includes a p-type semiconductor layer(125), an active layer(120), and an n-type semiconductor layer(115) which are successively stacked on the transparent electrode layer. An n-type electrode(145) is formed on the n-type semiconductor layer. A passivation layer(150) is formed to cover the lateral side of the light emitting structure.
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