ARRAY SUBSTRATE INCLUDING THIN FILM TRANSISTOR OF POLYCRYSTALLINE SILICON AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: An array substrate including a thin film transistor of a polycrystalline silicon and a method of fabricating the same, using a data line, a source, and a drain electrode by crystallizing amorphous silicon semiconductor into a poly-silicon semiconductor. CONSTITUTION: A gate wiring is formed on a substrate(101). A gate electrode(108) is connected to the gate wiring. A gate insulating layer(112) is formed on the gate wiring and the gate electrode. A sub-metal layer and a metal layer are formed on the gate insulating layer. A data wire(132), a source electrode(135), and a drain electrode(138) by patterning the sub-metal layer on the metal layer.