| 摘要 |
<p>PURPOSE: A nonvolatile semiconductor memory device and a manufacturing method of the same are provided to prevent the malfunction of a non-volatile memory device by making current flow into a string structure smooth. CONSTITUTION: A semiconductor substrate(101) comprises an active area and an element isolation region. First and second selection lines(SL1,SL2) are formed on the active region and the element isolation region. A first junction area(101a) is formed in the active area between the first and second select lines. A spacer(115) is formed in the sidewall of the first and second select lines. A second junction area(101b) is lower than the first junction area.</p> |
