METHOD OF FORMING LINE AND SPACE PATTERN

摘要

PURPOSE: A method for forming a line and a space pattern is provided to minimize distortion due to an optical proximity effect by uniformly arranging first pattern structures with a constant space. CONSTITUTION: A first pattern structure is formed on a hard mask material layer which is formed on a substrate(101). A second pattern structure comprised of spacers is formed on the sidewall of the first pattern structure. The first pattern structure is removed. The second pattern structure exposed by the first mask is removed. A hard mask(110a) is formed by etching the hard mask material layer using the second pattern structure as an etching mask. Line and space patterns are formed by etching the substrate using the hard mask as the etching mask.