THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD THEREOF
摘要
<p>PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to omit an additional etching process by etching a conductive layer for a pixel electrode and an oxide semiconductor layer. CONSTITUTION: A gate line(22) including a gate electrode(26) is formed on a substrate(10). An oxide semiconductor layer pattern(42) is formed on a transistor region and a pixel electrode forming region. A data line is formed on the oxide semiconductor layer pattern. A protection pattern(55,56) for the oxide semiconductor layer is formed between a source electrode and the oxide semiconductor layer pattern and between a drain electrode and the oxide semiconductor layer pattern. A pixel electrode(82) is electrically connected to the drain electrode.</p>
申请公布号
KR20100127051(A)
申请公布日期
2010.12.03
申请号
KR20090045556
申请日期
2009.05.25
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHOI, YOUNG JOO;PARK, HONG SICK;CHOUNG, JONG HYUN;HONG, SUN YOUNG;KIM, BONG KYUN;LEE, BYEONG JIN;LEE, WANG WOO;SUH, NAM SEOK