| 摘要 |
<p>PURPOSE: An electron beam lithographing method is provided to form an inclined pattern without increasing the number of a shot by measuring and comparing the location of a measurement pattern before/after a stage rotation process. CONSTITUTION: A measurement pattern is formed on a photomask(310). The measurement pattern is measured by an electron beam lithography device(320). An electron beam lithography process is executed in order to form the non-inclined pattern of the photomask. The photomask is rotated(340). The measurement pattern on the photomask is measured(350). An offset table is generated in order to correct deviation after comparing the measurement values before/after the rotation process. The deviation is corrected by applying the offset table(370). The electron beam lithography process is executed in order to form an inclined pattern(380).</p> |
