发明名称 METHOD OF INVESTIGATING OPEN OF SECOND CR LAYER IN PHASE SHIFT MASK
摘要 <p>PURPOSE: A testing method of a secondary chrome layer of a phase shift mask is provided to determine data errors caused by a user and to test the second opening of a chrome layer without using a specific testing device. CONSTITUTION: A testing method of a secondary chrome layer of a phase shift mask comprises the following steps: preparing a first image marking a chrome layer open area of the phase shift mask, based on data input by a user, using an exposure device(110); preparing a second image marked with a chrome layer open area of the phase shift mask based on design data(120); displaying an overlapping image formed by the first and second images(130); and testing the second opening of the chrome layer and a data error(140).</p>
申请公布号 KR20100127113(A) 申请公布日期 2010.12.03
申请号 KR20090045641 申请日期 2009.05.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, SANG IEE
分类号 G03F1/84;G03F1/26;H01L21/027;H01L21/66 主分类号 G03F1/84
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