| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of suppressing variation in the coupling ratio of a control gate that a memory cell has. SOLUTION: The nonvolatile semiconductor memory device includes an element isolation insulating film 11, which is formed over a semiconductor substrate at a constant interval in a first direction, extends in a second direction orthogonal to the first direction, has its upper surface lower than an upper surface of the semiconductor substrate, and separates the top of the semiconductor substrate into a plurality of element regions 12; a tunnel insulating film 14 formed on the element regions 12; a charge storage layer 15 formed only on the tunnel insulating film 14; a block layer 16, formed on the charge storage layer 15 and element isolation insulating film 11 continuously in the first direction and having a bottom surface lower than the surface of the semiconductor substrate on the element isolation insulating film 11, and a gate electrode formed on the block layer 16. COPYRIGHT: (C)2011,JPO&INPIT
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