发明名称 |
ETCHING METHOD AND METHOD FOR MANUFACTURING OPTICAL/ELECTRONIC DEVICE USING THE SAME |
摘要 |
Disclosed is a semiconductor etching method whereby a semiconductor layer made of, for example, a Group III-V nitride semiconductor resistant to etching can be etched by a relatively easier process. This etching method comprises forming a metal-fluoride layer 3 at least as a part of an etching mask on the surface of a base structure (1,2); treating the metal-fluoride layer with a liquid; and etching the base structure using the metal-fluoride layer as a mask.
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申请公布号 |
US2010304570(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
US20080740808 |
申请日期 |
2008.10.31 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
HORIE HIDEYOSHI;FUKADA TAKASHI |
分类号 |
H01L21/3065;H01L21/306;H01L33/00 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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