| 摘要 |
Test structures for in-line voltage contrast detection of PFET silicide encroachment defects are disclosed. Embodiments of the present invention provide for improved PFET test structures for detecting encroachment defects using VC imaging techniques. The test structures use body contacts, and the PFET components (source, drain, body, and gate) are either grounded, or floating, depending on the configuration. Some embodiments of the present invention also enable the use of positive mode conditions with PFET test structures, which provides for improved contrast in the VC images, improving the effectiveness of the defect detection achieved with VC imaging.
|
