<p>The write disturbance margin of reference cells that generate reference current during reading is improved. The bit line (BL) forms a clad wiring structure (40) in the normal cell region (10N) where normal memory cells (NMC0-NMC2) are disposed and a partially- or non-clad wiring structure (42) in the reference cell region (10R) where the reference cell (RMC) is disposed. Thus, the write magnetic field intensity applied to the reference cell is smaller than the write magnetic field intensity applied to a normal memory cell during identical write currents.</p>
