| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress failure that occurs on a bond substrate due to repeated use. <P>SOLUTION: The manufacturing method includes a first step in which a bond substrate is irradiated with accelerated ion to form a brittle region in the bond substrate, a second step in which the bond substrate and a base substrate are pasted together through an insulating layer, a third step in which the bond substrate is separated in the brittle region to form a semiconductor layer on the base substrate through the insulating layer, and a fourth step in which the bond substrate having been separated in the brittle region is applied with the first thermal process in an argon atmosphere, and then it is applied with the second thermal process in the mixed atmosphere of oxygen and nitrogen, to form a regenerative bond substrate. The regenerative bond substrate is reused as a bond substrate in the first step. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
