| 摘要 |
PROBLEM TO BE SOLVED: To add a metal capable of forming an electric dipole for reducing a threshold voltage at the interface of an oxide film formed on the surface of a semiconductor substrate and a high electric constant insulating film, while suppressing increase in EOT and decrease in carrier mobility. SOLUTION: A gate electrode 150 is formed via a gate insulating film 140 on a semiconductor substrate 100. The gate insulating film 140 includes an oxygen-containing insulating film 101, and a high dielectric constant insulating film 102 containing a first metal. The high dielectric constant insulating film 102, further, includes a second metal different from the first metal. A position at which the composition ratio of the second metal in the high dielectric constant insulating film 102 becomes a maximum is separated from each of the interface of the high dielectric constant insulating film 102 and the oxygen-containing insulating film 101, and the interface of the high dielectric constant insulating film 102 and the gate electrode 150. COPYRIGHT: (C)2011,JPO&INPIT
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