| 摘要 |
A method for forming super high stress layer is provided. First, a substrate is provided. Second, an ammonia-related pretreatment is performed on the substrate. The flow rate of ammonia is not less than s.c.c.m. and the high-frequency source power is set to be not less than 800 W. Later, the super high stress layer is formed on the substrate having undergone the ammonia-related pretreatment.
|
