发明名称 |
WAFER BONDING TECHNIQUE IN NITRIDE SEMICONDUCTORS |
摘要 |
A semiconductor arrangement is provided that includes one or more substrate structures. One or more nitride-based material structures are used in fabricating nitride-based devices. One or more intermediary layers are interposed between the one or more substrate structures and the one or more nitride-based material structures. The one or more intermediary layers support the lattice mismatch and thermal expansion coefficients between the one or more nitride-based material structure and the one or more substrate structures. Several new electronic devices based on this arrangement are described.
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申请公布号 |
US2010301347(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
US20090475740 |
申请日期 |
2009.06.01 |
申请人 |
CHUNG JINWOOK;WANG HAN;PALACIOS TOMAS |
发明人 |
CHUNG JINWOOK;WANG HAN;PALACIOS TOMAS |
分类号 |
H01L29/20;H01L21/18 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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