发明名称 PHASE TRANSITION MEMORIES AND TRANSISTORS
摘要 In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and wherein the method further includes imparting energy to the phase transition material region to induce a phase transition of the phase transition material region. By inducing a phase transition of the phase transition material region, a state of the semiconductor structure can be changed. There is further set forth an apparatus comprising a structure including an electrode and a phase transition material region, wherein the apparatus is operative for imparting energy to the phase transition material region to induce a phase transition of the phase transition material region without the phase transition of the phase transition material region being dependent on electron transport through the phase transition material region.
申请公布号 WO2010138876(A2) 申请公布日期 2010.12.02
申请号 WO2010US36667 申请日期 2010.05.28
申请人 CORNELL UNIVERSITY;TIWARI, SANDIP;SUNDARARAMAN, RAVISHANKAR;LEE, SANG HYEON;KIM, MOONKYUNG 发明人 TIWARI, SANDIP;SUNDARARAMAN, RAVISHANKAR;LEE, SANG HYEON;KIM, MOONKYUNG
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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