SUBSTRATE FOR COMPOUND SEMICONDUCTOR SOLAR CELL

摘要

Provided is a substrate for a compound semiconductor solar cell, wherein excellent elasticity is maintained even after a high-temperature process is performed for forming a thin film. The substrate for the compound semiconductor solar cell is composed of a steel plate, and has a Cr layer having a coat quantity of 300-8000 mg/m2 on the laminating surface side of the solar cell layer. One specific embodiment of the substrate is a substrate which has a Cr layer having a coat quantity of 500-3000 mg/m2 on the laminating surface side of the solar cell layer and the film-forming temperature of the solar cell layer below 550°C. Another specific embodiment of the substrate is a substrate which has a Cr layer having a coat quantity of 2000-8000 mg/m2 on the laminating surface side of the solar cell layer, and the film-forming temperature of the solar cell layer above 800°C. Another specific embodiment of the substrate is a substrate which has a Cr layer having a coat quantity of 2000-5000 mg/m2 on the laminating surface side of the solar cell layer, and the film-forming temperature of the solar cell layer within the range of 550-800°C. Furthermore, the substrate is characterized in that the Mn component in the steel strip is 2 wt% or less, and that the Fe component in the steel strip is 98 wt% or less.