| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a mold for forming a glass element, whereby mold life can be extended by eliminating occurrence of selective etching etc. based on crystal plane orientation and increasing number of recycle. <P>SOLUTION: On reference planes SS formed on CVD-SiC layers 22 and 32, extremely thin SiC interlayers 23 and 33, respectively, are formed by a PVD method so as to form films showing no deviation from stoichiometry and having markedly increased resistance to solutions such as acid/alkali. A PVD method enables film formation at a temperature lower than that in a CVD method, results in no growth of crystal grains and eliminates occurrence of selective etching of particular crystal planes. Since SiC interlayers 23 and 33 are formed after precision processing of the CVD-SiC layers 22 and 32, the degree of freedom of film-forming of the lower CVD-SiC layers 22 and 32 can be increased. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
