发明名称 |
OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME |
摘要 |
A method for fabricating a liquid crystal display (LCD) device include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a primary active layer having a tapered portion to a side of a channel region of the primary active layer on the gate insulating layer, and forming source and drain electrodes on the primary active layer; and forming a secondary active layer made of amorphous zinc oxide-based semiconductor on the source and drain electrodes and being in contact with the tapered portion of the primary active layer, wherein the primary active layer is etched at a low selectivity during a wet etching of the source and drain electrodes, to have the tapered portion.
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申请公布号 |
US2010301325(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
US20090618073 |
申请日期 |
2009.11.13 |
申请人 |
BAE JONG-UK;SEO HYUN-SIK;KIM YONG-YUB |
发明人 |
BAE JONG-UK;SEO HYUN-SIK;KIM YONG-YUB |
分类号 |
H01L33/00;H01L21/20;H01L29/786 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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