发明名称 |
FIELD EFFECT TRANSISTOR WITH INTEGRATED GATE CONTROL AND RADIO FREQUENCY SWITCH |
摘要 |
A field effect transistor (FET) including a monolithically integrated gate control circuit element can be included in, for example, a radio frequency switch circuit. For example, the FET can be included as a series and/or shunt FET of a radio frequency coplanar waveguide circuit. The widths of the series and shunt FETs of a switch circuit can be selected to provide a target isolation and/or a target insertion loss for a target operating frequency.
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申请公布号 |
US2010301922(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
US20100791272 |
申请日期 |
2010.06.01 |
申请人 |
SIMIN GRIGORY;KOUDYMOV ALEXEI;SHUR MICHAEL;GASKA REMIGIJUS |
发明人 |
SIMIN GRIGORY;KOUDYMOV ALEXEI;SHUR MICHAEL;GASKA REMIGIJUS |
分类号 |
H03K17/687;G06F17/50;H01L29/78 |
主分类号 |
H03K17/687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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