| 摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor island and a source drain electrode just by a single exposure process, and control an optical leakage current that leads to image degradation. SOLUTION: The semiconductor island IL is formed such that it does not run off the upper region of a gate line GL. The semiconductor island IL, a source electrode SE, and a drain electrode DE are formed by a single exposure process. A drain line DL is electrically connected by the intermediary of a drain connection line DJ to the drain electrode DE through a contact hole DC formed in the upper region of the gate line GL, and a pixel electrode PE is electrically connected by the intermediary of a pixel electrode connection line PJ to a source electrode SE through a contact hole SC formed in the upper region of the gate line GL. The drain line DL and the drain connection line DJ are made up by the lamination structure of a transparent conductive film 9 and a low-resistance conductive film 10, and the pixel electrode connection line PJ is made of the transparent conductive film 9. COPYRIGHT: (C)2011,JPO&INPIT
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