| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem wherein, although a titanium-based barrier metal film formed of titanium and titanium nitride is widely used as an aluminum diffusion barrier metal film under an aluminum-based source electrode in a power MOSFET, according to an examination, when the titanium-based barrier metal is used, warpage of a wafer is increased, wafer handling becomes difficult, it becomes obvious that problems of a wafer fracture, a wafer chip and the like become inevitable, and this trend is particularly noticeable in a product having a minimum dimension≤0.35μm. SOLUTION: When forming, by sputtering film formation, a tungsten-based barrier metal film (an alloy film containing tungsten such as TiW as a main constituent) as a barrier metal layer between an aluminum-based metal layer and a lower-layer silicon-based semiconductor layer, the barometric pressure of a sputtering film formation chamber is set≤1.2 Pa. COPYRIGHT: (C)2011,JPO&INPIT |
