摘要 |
A semiconductor process and apparatus provides an encapsulated shallow trench isolation region by forming a silicon nitride layer (96) to cover a shallow trench isolation region (95), depositing a protective dielectric layer (97, 98) over the silicon nitride layer (96), and polishing and densifying the protective dielectric layer (97, 98) to thereby form a densified silicon nitride encapsulation layer (99) over the shallow trench isolation region (95).
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