| 摘要 |
The invention discloses a sensitive field effect transistor apparatus, which uses the inorganic membrane to sense hydrogen ions. The invention adopts the membrane with high deformation stress. The sensitivity of sensitive membrane on hydrogen ion is adjusted through altering the membrane thickness and changing the substrate type and doped concentration. The differential amplifier is used to read signal to form the inorganic Ion Sensitive Field Effect Transistor/Reference Field Effect Transistor apparatus.
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