| 发明名称 |
METHOD AND APPARATUS FOR ETCHING |
| 摘要 |
Embodiments of the invention relate to a substrate etching method and apparatus. In one embodiment, a method for etching a substrate in a plasma etch reactor is provided that include flowing a backside process gas between a substrate and a substrate support assembly, and cyclically etching a layer on the substrate. |
| 申请公布号 |
WO2010088267(A4) |
申请公布日期 |
2010.12.02 |
| 申请号 |
WO2010US22223 |
申请日期 |
2010.01.27 |
| 申请人 |
APPLIED MATERIALS, INC.;CHESHIRE, ALAN;DETMAR, STANLEY |
发明人 |
CHESHIRE, ALAN;DETMAR, STANLEY |
| 分类号 |
H01L21/3065;B81C1/00;H05H1/34 |
主分类号 |
H01L21/3065 |
| 代理机构 |
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| 主权项 |
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