| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for removing phosphorus impurities or boron impurities from crude liquid polychlorosilanes in a manufacturing process for obtaining a high-purity silicon crystal from metal class silicon, and to provide a removing agent. SOLUTION: The removing method comprises contacting an activated carbon having an average grain size of 0.3-1.00 mm, having a volume of fine pores of≤0.10 mL/g of a diameter of fine pores of 50-22,500 nm according to the method of mercury intrusion method, having a diameter of fine pores of 100-400 nm at the peak of the volume of fine pores in the diameter of fine pores of≥50 nm, having a specific surface area measured by the BET method of≥1,300 m<SP>2</SP>/g, having a filling density of≥0.55 g/mL, having strongly heated residues of≤0.5 mass%, having a dust incidence by water shake tests of≤600 ppm (mass/mass), and a hardness of≥99.5%, with the liquid polychlorosilanes. COPYRIGHT: (C)2011,JPO&INPIT
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