| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor optical device, reducing variations in the device characteristics due to a change in the coupling coefficient of a diffraction grating. SOLUTION: A mask 31 is formed on a semiconductor region 13, by using an electron beam exposure method or a nanoimprinting method. The first pattern of the mask 31 is provided on the first area of the semiconductor region 13 periodically by a size value LX corresponding to an device size. The second pattern of the mask 31 is provided on the second area of the semiconductor region 13. The semiconductor region 13 is etched, by using the mask 31 and periodic structures 42a-42g for the diffraction grating corresponding to the first pattern and a monitor structure 44, corresponding to the second pattern are formed. The monitor structure 44 for monitoring the shape of the periodic structures 42a-42g is measured, as well as, on the basis of the result of the measurement, a desired periodic structure is selected from among the periodic structures 42a-42g; and a stripe mesas including the desired periodic structure is formed. COPYRIGHT: (C)2011,JPO&INPIT
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