| 摘要 |
A semiconductor device includes a gate insulator and a gate electrode stacked on a substrate, a source/drain pattern which fills a recess region formed at opposite sides adjacent to the gate electrode, the source/drain pattern being made of silicon-germanium doped with dopants and a metal germanosilicide layer disposed on the source/drain pattern. The metal germanosilicide layer is electrically connected to the source/drain pattern. Moreover, a proportion of germanium amount to the sum of the germanium amount and silicon amount in the metal germanosilicide layer is lower than that of germanium amount to the sum of the germanium amount and silicon amount in the source/drain pattern.
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