发明名称 |
Method of manufacturing a semiconductor device and substrate processing apparatus |
摘要 |
A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl4 and NH3 reacting with TiCl4 to the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCl4 and a second step of substituting the bonding branch contained in the TiN intermediate film by supplying H2 to the wafer, the first step and the second step being performed in this order.
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申请公布号 |
US2010304567(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
US20100801127 |
申请日期 |
2010.05.24 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
SAKAI MASANORI;SAITO TATSUYUKI |
分类号 |
H01L21/3205;B05C11/00 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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