发明名称 |
POLISHING PAD, POLYURETHANE LAYER THEREFOR, AND METHOD OF POLISHING A SILICON WAFER |
摘要 |
<p>A polyurethane layer for forming a polishing pad for a semiconductor wafer is described, wherein the polyurethane layer comprises: a foamed polyurethane, wherein the polyurethane foam has a density of about 640 to about 960 kg/m3, and a plurality of cells having an average diameter of about 20 to about 200 micrometers; and particles of a hydrophobic polymer having a critical surface energy of less than 35 mN/m and having a median particle size of 3 to 100 micrometers. Polishing pads as well as methods for polishing are also described.</p> |
申请公布号 |
WO2010138724(A1) |
申请公布日期 |
2010.12.02 |
申请号 |
WO2010US36418 |
申请日期 |
2010.05.27 |
申请人 |
ROGERS CORPORATION;LITKE, BRIAN;KOSS, MICHAEL, K. |
发明人 |
LITKE, BRIAN;KOSS, MICHAEL, K. |
分类号 |
B24B37/04;B24D13/14 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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