Manufacturing tungsten, chromium and molybdenum layers and their carbide, nitride and silicide, multi-layer structure and connection structure on solid substrate, comprises impacting substrate by tungsten, chromium and molybdenum carbonyl

摘要

The method for manufacturing tungsten, chromium and molybdenum layers and their carbides, nitrides and silicides, multi-layer structures and connection structures on solid substrates by decomposing their carbonyls in the presence of hydrocarbon, nitrogen or silicon hydride and/or inert gas, comprises impacting the solid substrate by tungsten, chromium and molybdenum carbonyls and carbonyls of inert gas and/or hydrocarbon, nitrogen and/or silicon hydride. The solid substrate is stepwisely or simultaneously impacted with vapors of tungsten, chromium and molybdenum carbonyls. The method for manufacturing tungsten, chromium and molybdenum layers and their carbides, nitrides and silicides, multi-layer structures and connection structures on solid substrates by decomposing their carbonyls in the presence of hydrocarbon, nitrogen or silicon hydride and/or inert gas, comprises impacting the solid substrate by tungsten, chromium and molybdenum carbonyls and carbonyls of inert gas and/or hydrocarbon, nitrogen and/or silicon hydride. The solid substrate is stepwisely or simultaneously impacted with vapors of tungsten, chromium and molybdenum carbonyls. The tungsten, chromium and molybdenum layers are manufactured with a flow rate in the interval of 1-500 cm 3>minutes ->1>without the presence of inert gas or with the presence of inert gas. The tungsten, chromium and molybdenum nitride layers are manufactured in the presence of nitrogen or mixture of nitrogen and inert gases. The tungsten, chromium and molybdenum carbide layers are manufactured in the presence of acetylene or ethylene or in the presence of mixture of acetylene or ethylene and inert gases. The tungsten, chromium and molybdenum silicide layers are manufactured in the presence of silicon tetrahydride or silicon hexahydride or in the presence of a mixture of silicon tetrahydride or silicon hexahydride and inert gases. The inert gases are helium, neon, argon or xenon. The solid substrate is arranged in an electrically conducting holder, which forms a cathode in a vacuum chamber of a physical vapor deposition apparatus. The substrate holder is connected to direct current voltage, high-frequency bias voltage, asymmetric high frequency bias voltage or electrical impulse bias voltage. The electrical impulse bias voltage is present in the electrically conducting holder against the grounding of the vacuum chamber in the interval of -10 V to -10 kV. The current density at the substrate is present in the interval of 0.01-100 mA.cm 2>. The electrically conducting holder carries out a rotation motion or a rotary translation motion. The substrate is cleaned by ion bombardment before applying the first layer, is heated at a temperature of 160[deg] C before applying the layers, and is heated by heat conduction from the holder, by irradiation of heat and/or by ion bombardment during the discharge into the inert gas. The manufacturing of layers takes place with a total pressure of 0.005-1000 Pa in the vacuum chamber. The process is used in combination with the further layers, which are produced by physical vapor deposition process. For manufacturing layers, tungsten hexacarbonyl, molybdenum-hexacarbonyl, dirhenium decacarbonyl, triruthenium dodecacarbonyl and triosmium dodecacarbonyl are used, where triethylborane and/or triethylborane and inert gas are used for manufacturing M-boron-carbon-layers, where M is tungsten, chromium, molybdenum, rhenium, ruthenium and osmium. An independent claim is included for a device for manufacturing tungsten, chromium and molybdenum layers and their carbides, nitrides and silicides, multi-layer structures and connection structures on solid substrates.