| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor capable of operating at high efficiency over a wide temperature range. SOLUTION: The field effect transistor comprises a silicon substrate 1 having a resistivity of≤0.02Ωcm; a channel layer 2 formed on the silicon substrate 1 and having a thickness of≥5μm; a barrier layer 4 formed on the channel layer 2 and supplying electrons to the channel layer 2; a two-dimensional electron gas layer 3 formed by a heterojunction of the channel layer 2 and the barrier layer 4; a source electrode 5 and a drain electrode 6 in ohmic contact with the barrier layer 4; and a gate electrode 7 formed between the source electrode 5 and the drain electrode 6 and forming Schottky junction with the barrier layer 4. COPYRIGHT: (C)2011,JPO&INPIT
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