发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem of extended test time caused by the necessity of detecting bit line failures by accessing to memory areas when there is a plurality of memory areas during bit line failure checking. SOLUTION: When a failure of a bit line or a sense amplifier is checked during bit line open test, a current supplied from one sense amplifier is detected by another sense amplifier. Thus, a plurality of bit line open failures are simultaneously detected, and test time is greatly shortened. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010272170(A) 申请公布日期 2010.12.02
申请号 JP20090123281 申请日期 2009.05.21
申请人 TOSHIBA CORP 发明人 TAKIZAWA MAKOTO;OZAKI SHOICHI;ABE KATSUMI
分类号 G11C29/12;G11C29/34 主分类号 G11C29/12
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