| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a nitride crystal of an element belonging to the group III, which can take out the nitride crystal of an element belonging to the group III such as a GaN single crystal formed by liquid phase growth from a raw material liquid within a short period of time. SOLUTION: A crucible 1 is stored in a treatment container 5. Before or after the crucible 1 is placed in the treatment container 5, a solid raw material treatment liquid 6 is set to flow into the treatment container 5. In the crucible 1, the state, where a seed substrate 2 supported by a supporting body 3, a crystal 8 generated on the seed substrate 2 and a solid raw material 4 covering these seed substrate 2 and the crystal 8, is maintained. The supporting body 3 has a plurality of supporting legs separately arranged at a specific distance apart, and the outer peripheral lower face side of the seed substrate 2 is supported by the supporting part of the respective supporting leg. COPYRIGHT: (C)2011,JPO&INPIT |
