SPIN TRANSFER TORQUE - MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD OF OPERATION
摘要
<p>A method is disclosed that includes controlling current flow direction for current sent over a source line or a bit line of a magnetic memory device. A current generated magnetic field assists switching of a direction of a magnetic field of a free layer of a magnetic element within a spin transfer torque magnetic tunnel junction (STT-MTJ) device.</p>
申请公布号
WO2010138860(A1)
申请公布日期
2010.12.02
申请号
WO2010US36645
申请日期
2010.05.28
申请人
QUALCOMM INCORPORATED;LI, XIA;LEE, KANGHO;ZHU, XIAOCHUN;KANG, SEUNG H.
